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IGBT transistor IKB10N60T TO-263-3, D ² Pak (2 leads+tab), TO-263AB

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    MPN IKB10N60TATMA1
    Other # IKB10N60T
    Mfr. Infineon
    Oneyac # A-IKB10N60TATMA1
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : TO-263-3, D ² Pak (2 leads+tab), TO-263AB

    Specifications FAQ

    Description Details Operation
    Product Category IGBT transistor
    Td (on/off) value at 25 ° C 12ns/215ns
    IGBT type NPT, Trench type field cutoff
    Vce (on) (maximum value) at different Vge and Ic 2.05V @ 15V,10A
    Power - maximum value 110W
    Reverse recovery time (trr) 115ns
    Package/Enclosure TO-263-3, D ² Pak (2 leads+tab), TO-263AB
    working temperature -40°C ~ 175°C(TJ)
    Switching energy 430uJ
    Gate charge 62nC
    Test conditions 400V, 10A, 23 ohms, 15V
    Voltage emitter breakdown (maximum value) 600V
    Current collector (Ic) (maximum value) 20A
    Current collector pulse (Icm) 30A
    Input type standard
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