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Power MOSFET BSZ0904NSI 8-PowerTDFN

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    MPN BSZ0904NSIATMA1
    Other # BSZ0904NSI
    Mfr. Infineon
    Oneyac # A-BSZ0904NSIATMA1
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : 8-PowerTDFN

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Current at 25 ° C - Continuous Drain (Id) 18A(Ta),40A(Tc)
    FET function Schottky diode (body)
    FET type N channels
    Vgs (maximum value) ±20V
    Vgs (th) (maximum value) for different IDs 2V @ 250uA
    Input capacitance (Ciss) at different Vds (maximum value) 1463pF @ 15V
    Gate charge (Qg) at different Vgs (maximum value) 11nC @ 4.5V
    Power dissipation (maximum value) 2.1W(Ta),37W(Tc)
    Package/Enclosure 8-PowerTDFN
    working temperature -55°C ~ 150°C(TJ)
    technology MOSFET (Metal Oxide)
    Leakage source voltage (Vdss) 30V
    Drive voltage (maximum RdsOn, minimum RdsOn) 4.5V,10V
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    A : Oneyac self-run selected brand has the original factory authorized agent qualification, and can provide the agent certificate.Part of the product data comes from partners (such as holder, future electronics, RS electronics), and we have carried out strict qualification examination for the products, with original factory labels and relevant bills for inspection.

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