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Power Mosfet BSZ086P03NS3E G 8-PowerTDFN

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    MPN BSZ086P03NS3EGATMA1
    Other # BSZ086P03NS3E G
    Mfr. Infineon
    Oneyac # A-BSZ086P03NS3EGATMA1
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : 8-PowerTDFN

    Specifications FAQ

    Description Details Operation
    Product Category Power Mosfet
    fet type p channel
    technology MOSFET (metal oxide)
    Input capacitance (Ciss) (maximum) at different Vds 4785pF @ 15V
    Gate charge at different VGS (QG) (maximum) 57.5nC @ 10V
    Current at 25°C-Continuous Drain (Id) 13.5A(Ta),40A(Tc)
    Vgs(th) (maximum) when different Id 3.1V @ 105uA
    On resistance at different Id and Vgs (maximum) 8.6 milliohm @ 20a, 10V
    Operating temperature -55°C ~ 150°C(TJ)
    Power dissipation (maximum) 2.1W(Ta),69W(Tc)
    Drain-Source Voltage (Vdss) 30V
    Vgs(Max) ±25V
    Package/Enclosure 8-PowerTDFN
    Drive voltage (Max RdsOn, Minimum RdsOn) 6V,10V
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    A : Please rest assured that the products sold in the Oneyac mall are all original and genuine products. We are the authorized dealer of electronic components of well-known brands both at home and abroad, and we guarantee the quality from the source.

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    A : Oneyac self-run selected brand has the original factory authorized agent qualification, and can provide the agent certificate.Part of the product data comes from partners (such as holder, future electronics, RS electronics), and we have carried out strict qualification examination for the products, with original factory labels and relevant bills for inspection.

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