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Power Mosfet BSP318S H6327 TO-261-4,TO-261AA

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    MPN BSP318SH6327XTSA1
    Other # BSP318S H6327
    Mfr. Infineon
    Oneyac # A-BSP318SH6327XTSA1
    Supplier Oneyac
    Unleaded/RoHs NO
    Description
    Package/Enclosure : TO-261-4,TO-261AA

    Specifications FAQ

    Description Details Operation
    Product Category Power Mosfet
    Current at 25°C-Continuous Drain (Id) 2.6A(Tj)
    fet type n channel
    Vgs(Max) ±20V
    On resistance at different Id and Vgs (maximum) 90 milliohm @ 2.6a, 10V
    Vgs(th) (maximum) when different Id 2V @ 20uA
    Input capacitance (Ciss) (maximum) at different Vds 380pF @ 25V
    Gate charge at different VGS (QG) (maximum) 20nC @ 10V
    Power dissipation (maximum) 1.8W(Ta)
    Package/Enclosure TO-261-4,TO-261AA
    Operating temperature -55°C ~ 150°C(TJ)
    technology MOSFET (metal oxide)
    Drain-Source Voltage (Vdss) 60V
    Drive voltage (Max RdsOn, Minimum RdsOn) 4.5V,10V
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