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Universal MOSFET TO-261-4,TO-261AA SOT-223 6.7*3.7*1.7mm

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    MPN NDT3055
    Mfr. ON Semiconductor
    Oneyac # A3-NDT3055
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : TO-261-4,TO-261AA Package/Enclosure : SOT-223 Package/Enclosure : 6.7*3.7*1.7mm

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    Datasheet

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    Specifications FAQ

    Description Details Operation
    Product Category Universal MOSFET
    Continuous drain current Id 4A(Ta)
    Drive voltage @ Rds On (Max), Rds On (Min) 10V
    Vgs (th) at different IDs (maximum value) 4V @ 250µA
    Gate charge (Qg) at different Vgs (maximum value) 15nC @ 10V
    Input capacitance (Ciss) at different Vds (maximum value) 250pF @ 30V
    Gate voltage Vgs ±20V
    Pd power dissipation (Max) 3W(Ta)
    Rds On(Max)@Id,Vgs 100m Ohms@4A,10V
    working temperature -65°C~150°C(TJ)
    Package/Enclosure TO-261-4,TO-261AA
    Continuous drain current Id 4A
    FET type N-Channel
    Drain source voltage Vds 60V
    Vgs (th) at different IDs (maximum value) 4V @ 250µA
    Gate charge (Qg) at different Vgs (maximum value) 15nC @ 10V
    Input capacitance (Ciss) at different Vds (maximum value) 250pF @ 30V
    Power Rating 3W(Ta)
    Rds On(Max)@Id,Vgs 100 milliohms @ 4A, 10V
    working temperature -65°C ~ 150°C(TJ)
    Continuous drain current Id 4 A
    Rds On(Max)@Id,Vgs 180 m0hms
    Gate voltage Vgs -20 V、+20 V
    Package/Enclosure SOT-223
    pin number 3+Tab
    Transistor configuration single
    FET type enhance
    Power Rating 3W
    Maximum operating temperature +150 °C
    width 3.7mm
    Minimum operating temperature -65 °C
    length 6.7mm
    Number of components per chip 1 Ohms
    Forward transconductance 6S
    height 1.7mm
    Package/Enclosure 6.7*3.7*1.7mm
    Transistor material Si
    Drain source voltage Vds 250 pF @ 30 V
    Typical shutdown delay time 37 ns
    Typical connection delay time 10 ns
    Forward diode voltage 1.2V
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