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Power MOSFET BSL211SP H6327 SOT-23-6 fine type, TSOT-23-6

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    MPN BSL211SPH6327XTSA1
    Other # BSL211SP H6327
    Mfr. Infineon
    Oneyac # A-BSL211SPH6327XTSA1
    Supplier Oneyac
    Unleaded/RoHs NO
    Description
    Package/Enclosure : SOT-23-6 fine type, TSOT-23-6

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Current at 25 ° C - Continuous Drain (Id) 4.7A(Ta)
    FET type P channel
    Vgs (maximum value) ±12V
    On resistance at different Id and Vgs (maximum value) 67 milliohms @ 4.7A, 4.5V
    Vgs (th) (maximum value) for different IDs 1.2V @ 25uA
    Input capacitance (Ciss) at different Vds (maximum value) 654pF @ 15V
    Gate charge (Qg) at different Vgs (maximum value) 12.4nC @ 10V
    Power dissipation (maximum value) 2W(Ta)
    Package/Enclosure SOT-23-6 fine type, TSOT-23-6
    working temperature -55°C ~ 150°C(TJ)
    technology MOSFET (Metal Oxide)
    Leakage source voltage (Vdss) 20V
    Drive voltage (maximum RdsOn, minimum RdsOn) 2.5V,4.5V
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