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Power MOSFET BSG0810NDI 8-PowerTDFN

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    MPN BSG0810NDIATMA1
    Other # BSG0810NDI
    Mfr. Infineon
    Oneyac # A-BSG0810NDIATMA1
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : 8-PowerTDFN

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Current at 25 ° C - Continuous Drain (Id) 19A,39A
    FET function Logic level gate, 4.5V drive
    FET type 2 N channel (double) asymmetric type
    On resistance at different Id and Vgs (maximum value) 3 milliohms @ 20A, 10V
    Vgs (th) (maximum value) for different IDs 2V @ 250uA
    Input capacitance (Ciss) at different Vds (maximum value) 1040pF @ 12V
    Gate charge (Qg) at different Vgs (maximum value) 8.4nC @ 4.5V
    Power - maximum value 2.5W
    Package/Enclosure 8-PowerTDFN
    working temperature -55°C ~ 155°C(TJ)
    Leakage source voltage (Vdss) 25V
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