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Power Mosfet BSC100N03MS G 8-PowerTDFN

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    MPN BSC100N03MSGATMA1
    Other # BSC100N03MS G
    Mfr. Infineon
    Oneyac # A-BSC100N03MSGATMA1
    Supplier Oneyac
    Unleaded/RoHs NO
    Description
    Package/Enclosure : 8-PowerTDFN

    Specifications FAQ

    Description Details Operation
    Product Category Power Mosfet
    Vgs(th) (maximum) when different Id 2V @ 250uA
    Drive voltage (Max RdsOn, Minimum RdsOn) 4.5V,10V
    Input capacitance (Ciss) (maximum) at different Vds 1700pF @ 15V
    Current at 25°C-Continuous Drain (Id) 12A(Ta),44A(Tc)
    Operating temperature -55°C ~ 150°C(TJ)
    technology MOSFET (metal oxide)
    Gate charge at different VGS (QG) (maximum) 23nC @ 10V
    On resistance at different Id and Vgs (maximum) 10 milliohm @ 30a, 10V
    Vgs(Max) ±20V
    Power dissipation (maximum) 2.5W(Ta),30W(Tc)
    Package/Enclosure 8-PowerTDFN
    fet type n channel
    Drain-Source Voltage (Vdss) 30V
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    A : Oneyac self-run selected brand has the original factory authorized agent qualification, and can provide the agent certificate.Part of the product data comes from partners (such as holder, future electronics, RS electronics), and we have carried out strict qualification examination for the products, with original factory labels and relevant bills for inspection.

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