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Power MOSFET BSC093N15NS5 8-PowerTDFN

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    MPN BSC093N15NS5ATMA1
    Other # BSC093N15NS5
    Mfr. Infineon
    Oneyac # A-BSC093N15NS5ATMA1
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : 8-PowerTDFN

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Current at 25 ° C - Continuous Drain (Id) 87A(Tc)
    FET type N channels
    Vgs (maximum value) ±20V
    On resistance at different Id and Vgs (maximum value) 9.3 milliohms @ 44A, 10V
    Vgs (th) (maximum value) for different IDs 4.6V @ 107uA
    Input capacitance (Ciss) at different Vds (maximum value) 3230pF @ 75V
    Gate charge (Qg) at different Vgs (maximum value) 40.7nC @ 10V
    Power dissipation (maximum value) 139W(Tc)
    Package/Enclosure 8-PowerTDFN
    working temperature -55°C ~ 150°C(TJ)
    technology MOSFET (Metal Oxide)
    Leakage source voltage (Vdss) 150V
    Drive voltage (maximum RdsOn, minimum RdsOn) 8V,10V
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