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Power MOSFET BSC0901NSI 8-PowerTDFN

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    MPN BSC0901NSIATMA1
    Other # BSC0901NSI
    Mfr. Infineon
    Oneyac # A-BSC0901NSIATMA1
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : 8-PowerTDFN Operating temperature : -55°C ~ 150°C(TJ)

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Vgs(Max) ±20V
    On resistance at different Id and Vgs (maximum) 2 milliohm @ 30A, 10V
    fet type n channel
    technology MOSFET (metal oxide)
    Drive voltage (Max RdsOn, Minimum RdsOn) 4.5V,10V
    Current at 25°C-Continuous Drain (Id) 28A(Ta),100A(Tc)
    Power dissipation (maximum) 2.5W(Ta),69W(Tc)
    Gate charge at different VGS (QG) (maximum) 20nC @ 15V
    Package/Enclosure 8-PowerTDFN
    Input capacitance (Ciss) (maximum) at different Vds 2600pF @ 15V
    Drain-Source Voltage (Vdss) 30V
    Operating temperature -55°C ~ 150°C(TJ)
    Vgs(th) (maximum) when different Id 2.2V @ 250uA
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    A : Oneyac self-run selected brand has the original factory authorized agent qualification, and can provide the agent certificate.Part of the product data comes from partners (such as holder, future electronics, RS electronics), and we have carried out strict qualification examination for the products, with original factory labels and relevant bills for inspection.

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