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Power MOSFET BSC084P03NS3E G 8-PowerTDFN

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    MPN BSC084P03NS3EGATMA1
    Other # BSC084P03NS3E G
    Mfr. Infineon
    Oneyac # A-BSC084P03NS3EGATMA1
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : 8-PowerTDFN Operating temperature : -55°C ~ 150°C(TJ)

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Package/Enclosure 8-PowerTDFN
    technology MOSFET (metal oxide)
    Gate charge at different VGS (QG) (maximum) 57.7nC @ 10V
    Drive voltage (Max RdsOn, Minimum RdsOn) 6V,10V
    fet type p channel
    Current at 25°C-Continuous Drain (Id) 14.9A(Ta),78.6A(Tc)
    Drain-Source Voltage (Vdss) 30V
    On resistance at different Id and Vgs (maximum) 8.4 milliohm @ 50a, 10V
    Operating temperature -55°C ~ 150°C(TJ)
    Vgs(th) (maximum) when different Id 3V @ 110uA
    Input capacitance (Ciss) (maximum) at different Vds 4240pF @ 15V
    Vgs(Max) ±25V
    Power dissipation (maximum) 2.5W(Ta),69W(Tc)
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