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Power Mosfet BSC057N08NS3 G 8-PowerTDFN

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    MPN BSC057N08NS3GATMA1
    Other # BSC057N08NS3 G
    Mfr. Infineon
    Oneyac # A-BSC057N08NS3GATMA1
    Supplier Oneyac
    Unleaded/RoHs NO
    Description
    Package/Enclosure : 8-PowerTDFN

    Specifications FAQ

    Description Details Operation
    Product Category Power Mosfet
    On resistance at different Id and Vgs (maximum) 5.7 milliohm @ 50a, 10V
    Package/Enclosure 8-PowerTDFN
    Current at 25°C-Continuous Drain (Id) 16A(Ta),100A(Tc)
    technology MOSFET (metal oxide)
    Drive voltage (Max RdsOn, Minimum RdsOn) 6V,10V
    Gate charge at different VGS (QG) (maximum) 56nC @ 10V
    Drain-Source Voltage (Vdss) 80V
    Vgs(Max) ±20V
    Vgs(th) (maximum) when different Id 3.5V @ 73uA
    Operating temperature -55°C ~ 150°C(TJ)
    Power dissipation (maximum) 2.5W(Ta),114W(Tc)
    fet type n channel
    Input capacitance (Ciss) (maximum) at different Vds 3900pF @ 40V
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    A : Oneyac self-run selected brand has the original factory authorized agent qualification, and can provide the agent certificate.Part of the product data comes from partners (such as holder, future electronics, RS electronics), and we have carried out strict qualification examination for the products, with original factory labels and relevant bills for inspection.

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