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Power MOSFET HSOP-8

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    MPN RS1E200GNTB
    Mfr. ROHM Semiconductor
    Authorized Distributor
    Oneyac # A-RS1E200GNTB
    Supplier Oneyac
    Product Cycle

    Production

    Unleaded/RoHs YES
    Description
    Package/Enclosure : HSOP-8

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Continuous drain current Id 20A
    Pd power dissipation (Max) 3W
    QG gate charge 16.8nC
    Rds On(Max)@Id,Vgs 4.6mΩ
    Drain source voltage Vds 30V
    Gate voltage Vgs 2.5V
    rise time 7.2ns
    Descent time 8.4ns
    Typical shutdown delay time 34.7ns
    Typical connection delay time 13.2ns
    Package/Enclosure HSOP-8
    FET type N-Channel
    Forward transconductance - minimum value 18S
    Number of channels 1Channel
    to configure Single
    working temperature -55°C~150°C
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