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Power MOSFET SOT-363

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    MPN NTJD4152PT1G
    Mfr. ON Semiconductor
    Oneyac # A-NTJD4152PT1G
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : SOT-363

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Package/Enclosure SOT-363
    FET type P-Channel
    Rds On(Max)@Id,Vgs 260mΩ@880mA,4.5V
    Pd power dissipation (Max) 272mW
    working temperature -55℃~150℃
    Gate voltage Vgs ±12V
    Drain source voltage Vds -20V
    Continuous drain current Id -0.88A
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