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Power Mosfet 

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    MPN IRLML6401TRPBF
    Mfr. Infineon
    Oneyac # A3-IRLML6401TRPBF
    Supplier Oneyac
    Unleaded/RoHs YES
    Description

    Specifications FAQ

    Description Details Operation
    Product Category Power Mosfet
    series HEXFET®
    Drive voltage @ Rds On (Max), Rds On (Min) 1.8V,4.5V
    Vgs (th) at different IDs (maximum value) 950mV @ 250µA
    Gate charge (Qg) at different Vgs (maximum value) 15nC @ 5V
    Input capacitance (Ciss) at different Vds (maximum value) 830pF @ 10V
    Gate voltage Vgs ±8V
    Pd power dissipation (Max) 1.3W(Ta)
    Rds On(Max)@Id,Vgs 50mΩ@4.3A,4.5V
    working temperature -55°C~150°C(TJ)
    FET type P-Channel
    Continuous drain current Id 4.3A
    Drain source voltage Vds 12V
    Encapsulation/shell SOT-23
    Voltage, coupled to gate charge (Qg) (maximum) @ Vgs 5V
    Voltage, coupled to input capacitor (Ciss) (maximum) @ Vds 10V
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    In Stock :  9,000 Lead Time:12W

    Qty. Unit Price Ext. Price
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    MPQ 3,000 ETD HK 5~17 Working Days
    Min. 1 Mult. 1

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