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General MOSFET 

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    MPN IRLML6302TRPBF
    Mfr. Infineon
    Oneyac # A3-IRLML6302TRPBF
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Single P-Channel 20 V 540 W 2.4 nC Hexfet Power Mosfet Surface Mount - MICRO-3

    Specifications FAQ

    Description Details Operation
    Product Category General MOSFET
    Vgs (th) at different IDs (maximum value) 1.5V @ 250µA
    Gate charge (Qg) at different Vgs (maximum value) 3.6nC @ 4.45V
    Gate voltage Vgs ±12V
    Input capacitance (Ciss) at different Vds (maximum value) 97pF @ 15V
    Pd power dissipation (Max) 540mW(Ta)
    working temperature -55°C~150°C(TJ)
    series HEXFET®
    Drive voltage @ Rds On (Max), Rds On (Min) 2.7V,4.5V
    Vgs (th) at different IDs (maximum value) 1.5V @ 250µA
    Gate charge (Qg) at different Vgs (maximum value) 3.6nC @ 4.45V
    Input capacitance (Ciss) at different Vds (maximum value) 97pF @ 15V
    Rds On(Max)@Id,Vgs 600mΩ@610mA,4.5V
    FET type P-Channel
    Drain source voltage Vds 20V
    Continuous drain current Id 0.78A
    Encapsulation/shell Micro3™/SOT-23
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