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Power MOSFET 8-SO

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    MPN IRF7240TRPBF
    Mfr. Infineon
    Oneyac # A3-IRF7240TRPBF
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Single P-Channel 40 V 2.5 W 73 nC Hexfet Power Mosfet Surface Mount - SOIC-8

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Series HEXFET®
    Drive voltage @ Rds On (Max), Rds On (Min) 4.5V,10V
    Vgs (th) at different IDs (maximum value) 3V @ 250µA
    Gate charge (Qg) at different Vgs (maximum value) 110nC @ 10V
    Input capacitance (Ciss) at different Vds (maximum value) 9250pF @ 25V
    Gate voltage Vgs ±20V
    Pd power dissipation (Max) 2.5W(Ta)
    Rds On(Max)@Id,Vgs 15mΩ@10.5A,10V
    working temperature -55°C~150°C(TJ)
    FET type P-Channel
    Continuous drain current Id 10.5A
    Drain source voltage Vds 40V
    Gate charge (Qg) at different Vgs (maximum value) 110nC
    Voltage, coupled to gate charge (Qg) (maximum) @ Vgs 10V
    Input capacitance (Ciss) at different Vds (maximum value) 9250pF
    Voltage, coupled to input capacitor (Ciss) (maximum) @ Vds 25V
    Package/Enclosure 8-SO
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