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Power MOSFET SOT-23-3

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    MPN SQ2310ES-T1_GE3
    Mfr. Vishay
    Oneyac # A1-SQ2310ES-T1_GE3
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : SOT-23-3

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Series SQ
    Vgs (th) at different IDs (maximum value) 1V @ 250µA
    Gate charge (Qg) at different Vgs (maximum value) 8.5nC @ 4.5V
    Input capacitance (Ciss) at different Vds (maximum value) 485pF @ 10V
    Gate voltage Vgs ±8V
    Pd power dissipation (Max) 2W(Tc)
    working temperature -55°C~175°C(TJ)
    Package/Enclosure SOT-23-3
    FET type N-Channel
    Drain source voltage Vds 20V
    Continuous drain current Id 6A(Tc)
    Drive voltage @ Rds On (Max), Rds On (Min) 1.5V,4.5V
    Vgs (th) at different IDs (maximum value) 1V @ 250µA
    Gate charge (Qg) at different Vgs (maximum value) 8.5nC @ 4.5V
    Input capacitance (Ciss) at different Vds (maximum value) 485pF @ 10V
    Rds On(Max)@Id,Vgs 30mΩ@5A,4.5V
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    In Stock :  0 Lead Time:27W

    Qty. Unit Price Ext. Price
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