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Small signal MOSFET ±10V 540mW(Ta) 105mΩ@2A,4.5V 150°C(TJ) TSMT N-Channel 20V 2A

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MPN RUR020N02TL
Mfr. ROHM Semiconductor
Authorized Distributor
Oneyac # A3-RUR020N02TL
Supplier Oneyac
Product Cycle

Production

Unleaded/RoHs Lead Free/Rohs
Description RUR020N02 Series 20 V 2 A 2 nC Surface Mount N-Channel Mosfet - TSMT-3

Specifications FAQ

Product Attribute Attribute Value Operation
Product Category Small signal MOSFET
Drive voltage @ Rds On (Max), Rds On (Min) 1.5V,4.5V
Vgs (th) at different IDs (maximum value) 1V @ 1mA
Gate charge (Qg) at different Vgs (maximum value) 2nC @ 4.5V
Input capacitance (Ciss) at different Vds (maximum value) 180pF @ 10V
Gate voltage Vgs ±10V
Pd power dissipation (Max) 540mW(Ta)
Rds On(Max)@Id,Vgs 105mΩ@2A,4.5V
working temperature 150°C(TJ)
Package/Enclosure TSMT
FET type N-Channel
Drain source voltage Vds 20V
Continuous drain current Id 2A
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In Stock :  100

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