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Power MOSFET SOIC-8

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MPN SI4850EY-T1-GE3
Mfr. Vishay
Authorized Distributor
Oneyac # A-SI4850EY-T1-GE3
Supplier Oneyac
Unleaded/RoHs Lead Free/Rohs
Description
Package/Enclosure : SOIC-8

Specifications FAQ

Description Details Operation
Product Category Power MOSFET
Series TrenchFET®
Drive voltage @ Rds On (Max), Rds On (Min) 4.5V,10V
Vgs (th) at different IDs (maximum value) 3V @ 250µA
Gate charge (Qg) at different Vgs (maximum value) 27nC @ 10V
Gate voltage Vgs ±20V
Pd power dissipation (Max) 1.7W(Ta)
working temperature -55°C~175°C(TJ)
Package/Enclosure SOIC-8
FET type N-Channel
Drain source voltage Vds 60V
Continuous drain current Id 6A
Rds On(Max)@Id,Vgs 22mΩ
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In Stock :  0 Lead Time:13W

Qty. Unit Price Ext. Price
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