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Power MOSFET SOIC-8

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    MPN SIR422DP-T1-GE3
    Mfr. Vishay
    Oneyac # A3-SIR422DP-T1-GE3
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : SOIC-8 Series : SIR

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Series SIR
    Part number alias SIR422DP-GE3
    Drive voltage @ Rds On (Max), Rds On (Min) 4.5V,10V
    Vgs (th) at different IDs (maximum value) 2.5V @ 250µA
    Gate charge (Qg) at different Vgs (maximum value) 48nC @ 10V
    Input capacitance (Ciss) at different Vds (maximum value) 1785pF @ 20V
    working temperature -55°C~150°C(TJ)
    Package/Enclosure SOIC-8
    Continuous drain current Id 20.5A
    Pd power dissipation (Max) 34.7W
    QG gate charge 48nC
    Rds On(Max)@Id,Vgs 6.6mΩ@20A,10V
    Drain source voltage Vds 40V
    Gate voltage Vgs ±20V
    rise time 84ns
    Descent time 11ns
    Typical shutdown delay time 28ns
    Typical connection delay time 19ns
    Forward transconductance - minimum value 70S
    FET type N-Channel
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