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Power MOSFET D2PAK

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    MPN IRL2505STRLPBF
    Mfr. Infineon
    Oneyac # A-IRL2505STRLPBF
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Single N-Channel 55 V 3.8 W 130 nC Hexfet Power Mosfet Surface Mount - D2PAK-3

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Vgs (th) at different IDs (maximum value) 2V @ 250µA
    Gate charge (Qg) at different Vgs (maximum value) 130nC @ 5V
    Gate voltage Vgs ±16V
    Input capacitance (Ciss) at different Vds (maximum value) 5000pF @ 25V
    Pd power dissipation (Max) 3.8W(Ta),200W(Tc)
    working temperature -55°C~175°C(TJ)
    Series HEXFET®
    Drive voltage @ Rds On (Max), Rds On (Min) 4V,10V
    Vgs (th) at different IDs (maximum value) 2V @ 250µA
    Gate charge (Qg) at different Vgs (maximum value) 130nC @ 5V
    Input capacitance (Ciss) at different Vds (maximum value) 5000pF @ 25V
    Rds On(Max)@Id,Vgs 8mΩ@54A,10V
    FET type N-Channel
    Drain source voltage Vds 55V
    Continuous drain current Id 104A
    Package/Enclosure D2PAK
    Voltage, coupled to gate charge (Qg) (maximum) @ Vgs 5V
    Voltage, coupled to input capacitor (Ciss) (maximum) @ Vds 25V
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