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Power MOSFET TO-220AB

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    MPN IRL1004PBF
    Mfr. Infineon
    Oneyac # A-IRL1004PBF
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Single N-Channel 55 V 110 W 23 nC Hexfet Power Mosfet Flange Mount - TO-220AB

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Vgs (th) at different IDs (maximum value) 1V @ 250µA
    Gate charge (Qg) at different Vgs (maximum value) 100nC @ 4.5V
    Gate voltage Vgs ±16V
    Input capacitance (Ciss) at different Vds (maximum value) 5330pF @ 25V
    Pd power dissipation (Max) 200W(Tc)
    working temperature -55°C~175°C(TJ)
    Series HEXFET®
    Drive voltage @ Rds On (Max), Rds On (Min) 4.5V,10V
    Vgs (th) at different IDs (maximum value) 1V @ 250µA
    Gate charge (Qg) at different Vgs (maximum value) 100nC @ 4.5V
    Input capacitance (Ciss) at different Vds (maximum value) 5330pF @ 25V
    Rds On(Max)@Id,Vgs 6.5mΩ@78A,10V
    FET type N-Channel
    Drain source voltage Vds 40V
    Continuous drain current Id 130A
    Package/Enclosure TO-220AB
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    A : Oneyac self-run selected brand has the original factory authorized agent qualification, and can provide the agent certificate.Part of the product data comes from partners (such as holder, future electronics, RS electronics), and we have carried out strict qualification examination for the products, with original factory labels and relevant bills for inspection.

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    In Stock :  0 Lead Time:16W

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