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Power MOSFET 

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    MPN IRFZ44VZSPBF
    Mfr. Infineon
    Oneyac # A-IRFZ44VZSPBF
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Series : HEXFET

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Drive voltage @ Rds On (Max), Rds On (Min) 10V
    Vgs (th) at different IDs (maximum value) 4V @ 250µA
    Gate charge (Qg) at different Vgs (maximum value) 65nC @ 10V
    Input capacitance (Ciss) at different Vds (maximum value) 1690pF @ 25V
    working temperature -55°C~175°C(TJ)
    Continuous drain current Id 57A
    Rds On(Max)@Id,Vgs 12mΩ
    Minimum gate threshold voltage 2V
    pin number 3
    Transistor configuration single
    category Power MOSFET
    Pd power dissipation (Max) 92W
    height 4.83mm
    Number of components per chip 1 Ohms
    width 9.65mm
    Series HEXFET
    Transistor material Si
    Typical shutdown delay time 35 ns
    Typical connection delay time 14 ns
    length 10.67mm
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