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Power MOSFET 6-TSOP

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    MPN IRFTS9342TRPBF
    Mfr. Infineon
    Oneyac # A-IRFTS9342TRPBF
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : 6-TSOP

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Vgs (th) at different IDs (maximum value) 2.4V @ 25µA
    Gate charge (Qg) at different Vgs (maximum value) 12nC
    Voltage, coupled to gate charge (Qg) (maximum) @ Vgs 10V
    Gate voltage Vgs ±20V
    Input capacitance (Ciss) at different Vds (maximum value) 595pF
    Voltage, coupled to input capacitor (Ciss) (maximum) @ Vds 25V
    Pd power dissipation (Max) 2W(Ta)
    working temperature -55°C~150°C(TJ)
    Series HEXFET®
    Drive voltage @ Rds On (Max), Rds On (Min) 4.5V,10V
    Vgs (th) at different IDs (maximum value) 2.4V @ 25µA
    Gate charge (Qg) at different Vgs (maximum value) 12nC @ 10V
    Input capacitance (Ciss) at different Vds (maximum value) 595pF @ 25V
    Rds On(Max)@Id,Vgs 40mΩ@5.8A,10V
    FET type P-Channel
    Drain source voltage Vds 30V
    Continuous drain current Id 5.8A
    Package/Enclosure 6-TSOP
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