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Power MOSFET 

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    MPN IRFSL7434PBF
    Mfr. Infineon
    Oneyac # A-IRFSL7434PBF
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Series : HEXFET

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Drive voltage @ Rds On (Max), Rds On (Min) 6V,10V
    Vgs (th) at different IDs (maximum value) 3.9V @ 250µA
    Gate charge (Qg) at different Vgs (maximum value) 324nC @ 10V
    Input capacitance (Ciss) at different Vds (maximum value) 10820pF @ 25V
    working temperature -55°C~175°C(TJ)
    Continuous drain current Id 320A
    Rds On(Max)@Id,Vgs 1.8mΩ
    Transistor configuration single
    pin number 3
    category Power MOSFET
    Pd power dissipation (Max) 294W
    length 10.67mm
    height 9.65mm
    Forward transconductance 211S
    Forward diode voltage 1.3V
    Series HEXFET
    Transistor material Si
    Typical shutdown delay time 115 ns
    Typical connection delay time 24 ns
    width 4.83mm
    Number of components per chip 1 Ohms
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