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Power MOSFET 

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    MPN IRFSL7430PBF
    Mfr. Infineon
    Oneyac # A-IRFSL7430PBF
    Supplier Oneyac
    Unleaded/RoHs YES
    Description

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Drive voltage @ Rds On (Max), Rds On (Min) 6V,10V
    Vgs (th) at different IDs (maximum value) 3.9V @ 250µA
    Gate charge (Qg) at different Vgs (maximum value) 460nC @ 10V
    Input capacitance (Ciss) at different Vds (maximum value) 14240pF @ 25V
    working temperature -55°C~175°C(TJ)
    Continuous drain current Id 426A
    Rds On(Max)@Id,Vgs 1.2mΩ
    pin number 3
    Transistor configuration single
    category Power MOSFET
    Pd power dissipation (Max) 375W
    height 9.65mm
    Forward transconductance 150S
    Series HEXFET
    Forward diode voltage 1.3V
    Transistor material Si
    Typical shutdown delay time 160 ns
    width 4.83mm
    Number of components per chip 1 Ohms
    Typical connection delay time 32 ns
    length 10.67mm
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