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Power MOSFET D²PAK(TO-263)

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    MPN IRFS3307ZTRRPBF
    Mfr. Infineon
    Oneyac # A-IRFS3307ZTRRPBF
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    N-Channel 75 V 5.8 mO 79 nC SMT HEXFET Power Mosfet - D2PAK

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Vgs (th) at different IDs (maximum value) 4V @ 150µA
    Gate charge (Qg) at different Vgs (maximum value) 110nC @ 10V
    Gate voltage Vgs ±20V
    Input capacitance (Ciss) at different Vds (maximum value) 4750pF @ 50V
    Pd power dissipation (Max) 230W(Tc)
    working temperature -55°C~175°C(TJ)
    Series HEXFET®
    Drive voltage @ Rds On (Max), Rds On (Min) 10V
    Vgs (th) at different IDs (maximum value) 4V @ 150µA
    Gate charge (Qg) at different Vgs (maximum value) 110nC @ 10V
    Input capacitance (Ciss) at different Vds (maximum value) 4750pF @ 50V
    Rds On(Max)@Id,Vgs 5.8mΩ@75A,10V
    FET type N-Channel
    Drain source voltage Vds 75V
    Continuous drain current Id 120A
    Package/Enclosure D²PAK(TO-263)
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