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Power MOSFET D2PAK

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    MPN IRFS3306TRLPBF
    Mfr. Infineon
    Oneyac # A-IRFS3306TRLPBF
    Supplier Oneyac
    Unleaded/RoHs Lead Free/Rohs
    Description
    Single N-Channel 60 V 230 W 85 nC Hexfet Power Mosfet Surface Mount - D2PAK-3

    Specifications FAQ

    Product Attribute Attribute Value Operation
    Product Category Power MOSFET
    Vgs (th) at different IDs (maximum value) 4V @ 150µA
    Gate charge (Qg) at different Vgs (maximum value) 120nC @ 10V
    Input capacitance (Ciss) at different Vds (maximum value) 4520pF @ 50V
    working temperature -55°C~175°C(TJ)
    Series HEXFET®
    Drive voltage @ Rds On (Max), Rds On (Min) 10V
    Vgs (th) at different IDs (maximum value) 4V @ 150µA
    Gate charge (Qg) at different Vgs (maximum value) 120nC @ 10V
    Input capacitance (Ciss) at different Vds (maximum value) 4520pF @ 50V
    Package/Enclosure D2PAK
    Number of channels 1Channel
    Drain source voltage Vds 60V
    Continuous drain current Id 160A
    Rds On(Max)@Id,Vgs 3.3mΩ
    Gate voltage Vgs 20V
    QG gate charge 85nC
    to configure Single
    Pd power dissipation (Max) 230W
    height 4.4mm
    length 10mm
    FET type N-Channel
    width 9.25mm
    Forward transconductance - minimum value 230S
    Descent time 77ns
    rise time 76ns
    Typical shutdown delay time 40ns
    Typical connection delay time 15ns
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