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Power Mosfet TO-252-3

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    MPN IRFR3710ZTRPBF
    Mfr. Infineon
    Oneyac # A-IRFR3710ZTRPBF
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : TO-252-3

    Specifications FAQ

    Description Details Operation
    Product Category Power Mosfet
    Package/Enclosure TO-252-3
    Input capacitance (Ciss) at different Vds (maximum) 2930pF @ 25V
    fet type N-Channel
    Gate Charge (Qg) at Different Vgs (Maximum) 100nC @ 10V
    Voltage, coupled to input capacitance (Ciss) (max) @ Vds 25V
    Drive voltage @Rds On (Max), Rds On (Min) 10V
    Gate Charge (Qg) at Different Vgs (Maximum) 100nC @ 10V
    Pd-power dissipation (Max) 140W(Tc)
    Gate voltage Vgs ±20V
    Operating temperature -55°C~175°C(TJ)
    Continuous Drain Current Id 56A
    Rds On(Max)@Id,Vgs 18mΩ@33A,10V
    Series HEXFET®
    Vgs (th) (maximum) at different Ids 4V @ 250µA
    Input capacitance (Ciss) at different Vds (maximum) 2930pF @ 25V
    Voltage, coupled to gate charge (Qg) (max) @ Vgs 10V
    Vgs (th) (maximum) at different Ids 4V @ 250µA
    Drain-source voltage Vds 100V
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