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Power MOSFET D-Pak

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    MPN IRFR3411TRPBF
    Mfr. Infineon
    Oneyac # A-IRFR3411TRPBF
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Single N-Channel 100 V 44 mOhm 71 nC 130 W Silicon SMT Mosfet - TO-252-3

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Vgs (th) at different IDs (maximum value) 4V @ 250µA
    Gate charge (Qg) at different Vgs (maximum value) 71nC @ 10V
    Gate voltage Vgs ±20V
    Input capacitance (Ciss) at different Vds (maximum value) 1960pF @ 25V
    Pd power dissipation (Max) 130W(Tc)
    working temperature -55°C~175°C(TJ)
    Series HEXFET®
    Drive voltage @ Rds On (Max), Rds On (Min) 10V
    Vgs (th) at different IDs (maximum value) 4V @ 250µA
    Gate charge (Qg) at different Vgs (maximum value) 71nC @ 10V
    Input capacitance (Ciss) at different Vds (maximum value) 1960pF @ 25V
    Rds On(Max)@Id,Vgs 44mΩ@16A,10V
    FET type N-Channel
    Drain source voltage Vds 100V
    Continuous drain current Id 32A
    Package/Enclosure D-Pak
    Voltage, coupled to gate charge (Qg) (maximum) @ Vgs 10V
    Voltage, coupled to input capacitor (Ciss) (maximum) @ Vds 25V
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