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Power Mosfet 

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    MPN IRFR3410TRPBF
    Mfr. Infineon
    Oneyac # A-IRFR3410TRPBF
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    N-Channel 100 V 39 mOhm 56 nC HexFet Power Mosfet Surface Mount - TO-252

    Specifications FAQ

    Description Details Operation
    Product Category Power Mosfet
    Vgs (th) at different IDs (maximum value) 4V @ 250µA
    Gate charge (Qg) at different Vgs (maximum value) 56nC @ 10V
    Gate voltage Vgs ±20V
    Input capacitance (Ciss) at different Vds (maximum value) 1690pF @ 25V
    Pd power dissipation (Max) 3W(Ta),110W(Tc)
    working temperature -55°C~175°C(TJ)
    series HEXFET®
    Drive voltage @ Rds On (Max), Rds On (Min) 10V
    Vgs (th) at different IDs (maximum value) 4V @ 250µA
    Gate charge (Qg) at different Vgs (maximum value) 56nC @ 10V
    Input capacitance (Ciss) at different Vds (maximum value) 1690pF @ 25V
    Rds On(Max)@Id,Vgs 39mΩ@18A,10V
    FET type N-Channel
    Drain source voltage Vds 100V
    Continuous drain current Id 31A
    Encapsulation/shell D-Pak
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    In Stock :  2,000 Lead Time:14W

    Qty. Unit Price Ext. Price
    1+ : Inquiry
    When unpacking without original label and tray!
    MPQ 2,000 ETD HK 5~7 Working Days
    Min. 1 Mult. 1

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