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Power MOSFET TO-220AB

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    MPN IRFB4410ZPBF
    Mfr. Infineon
    Oneyac # A-IRFB4410ZPBF
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    N-Channel 100 V 9 mO 83 nC Flange Mount Hexfet Power Mosfet - TO-220AB

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Vgs (th) at different IDs (maximum value) 4V @ 150µA
    Gate charge (Qg) at different Vgs (maximum value) 120nC @ 10V
    Gate voltage Vgs ±20V
    Input capacitance (Ciss) at different Vds (maximum value) 4820pF @ 50V
    Pd power dissipation (Max) 230W(Tc)
    working temperature -55°C~175°C(TJ)
    Series HEXFET®
    Drive voltage @ Rds On (Max), Rds On (Min) 10V
    Vgs (th) at different IDs (maximum value) 4V @ 150µA
    Gate charge (Qg) at different Vgs (maximum value) 120nC @ 10V
    Input capacitance (Ciss) at different Vds (maximum value) 4820pF @ 50V
    Rds On(Max)@Id,Vgs 9mΩ@58A,10V
    FET type N-Channel
    Drain source voltage Vds 100V
    Continuous drain current Id 97A
    Package/Enclosure TO-220AB
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    A : Oneyac self-run selected brand has the original factory authorized agent qualification, and can provide the agent certificate.Part of the product data comes from partners (such as holder, future electronics, RS electronics), and we have carried out strict qualification examination for the products, with original factory labels and relevant bills for inspection.

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    In Stock :  0 Lead Time:14W

    Qty. Unit Price Ext. Price
    1+ : Inquiry
    When unpacking without original label and tray!
    MPQ 1,000 ETD HK Contact Us
    Min. 1 Mult. 1

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