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Power MOSFET TO-220AB

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    MPN IRFB4410PBF
    Mfr. Infineon
    Oneyac # A-IRFB4410PBF
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Single N-Channel 100 V 200 W 120 nC Hexfet Power Mosfet Flange Mount - TO-220

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Vgs (th) at different IDs (maximum value) 4V @ 150µA
    Gate charge (Qg) at different Vgs (maximum value) 180nC @ 10V
    Gate voltage Vgs ±20V
    Input capacitance (Ciss) at different Vds (maximum value) 5150pF @ 50V
    Pd power dissipation (Max) 200W(Tc)
    working temperature -55°C~175°C(TJ)
    Series HEXFET®
    Drive voltage @ Rds On (Max), Rds On (Min) 10V
    Vgs (th) at different IDs (maximum value) 4V @ 150µA
    Gate charge (Qg) at different Vgs (maximum value) 180nC @ 10V
    Input capacitance (Ciss) at different Vds (maximum value) 5150pF @ 50V
    Rds On(Max)@Id,Vgs 10mΩ@58A,10V
    FET type N-Channel
    Drain source voltage Vds 100V
    Continuous drain current Id 88A
    Package/Enclosure TO-220AB
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    A : Oneyac self-run selected brand has the original factory authorized agent qualification, and can provide the agent certificate.Part of the product data comes from partners (such as holder, future electronics, RS electronics), and we have carried out strict qualification examination for the products, with original factory labels and relevant bills for inspection.

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