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Power MOSFET 8-SO

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    MPN IRF9389TRPBF
    Mfr. Infineon
    Oneyac # A-IRF9389TRPBF
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    N/P-Channel ±30 V 27/64 mO 2 W HEXFET Mosfet Surface Mount - SOIC-8

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Vgs (th) at different IDs (maximum value) 2.3V @ 10µA
    Gate charge (Qg) at different Vgs (maximum value) 14nC @ 10V
    Input capacitance (Ciss) at different Vds (maximum value) 398pF @ 15V
    working temperature -55°C~150°C(TJ)
    Series HEXFET®
    Rds On(Max)@Id,Vgs 27mΩ@6.8A,10V
    Vgs (th) at different IDs (maximum value) 2.3V @ 10µA
    Gate charge (Qg) at different Vgs (maximum value) 14nC @ 10V
    Input capacitance (Ciss) at different Vds (maximum value) 398pF @ 15V
    Pd power dissipation (Max) 2W
    FET type N+P-Channel
    Drain source voltage Vds 30V
    Continuous drain current Id 6.8A,4.6A
    Package/Enclosure 8-SO
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