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Power MOSFET 

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    MPN IRF9332TRPBF
    Mfr. Infineon
    Oneyac # A-IRF9332TRPBF
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Series : HEXFET

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Drive voltage @ Rds On (Max), Rds On (Min) 4.5V,10V
    Vgs (th) at different IDs (maximum value) 2.4V @ 25µA
    working temperature -55°C~150°C(TJ)
    Gate charge (Qg) at different Vgs (maximum value) 41nC
    Voltage, coupled to gate charge (Qg) (maximum) @ Vgs 10V
    Input capacitance (Ciss) at different Vds (maximum value) 1270pF
    Voltage, coupled to input capacitor (Ciss) (maximum) @ Vds 25V
    Continuous drain current Id 9.8A
    Rds On(Max)@Id,Vgs 28.1mΩ
    Minimum gate threshold voltage 1.3V
    pin number 8
    category Power MOSFET
    Pd power dissipation (Max) 2.5W
    Typical connection delay time 15 ns
    Typical shutdown delay time 73 ns
    height 1.50mm
    Series HEXFET
    Number of components per chip 1 Ohms
    width 4mm
    length 5mm
    Forward transconductance 36S
    Forward diode voltage 1.2V
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