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Power MOSFET 8-SO

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    MPN IRF8910TRPBF
    Mfr. Infineon
    Oneyac # A-IRF8910TRPBF
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Dual N-Channel 20 V 2 W 7.4 nC Hexfet Power Mosfet Surface Mount - SOIC-8

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Vgs (th) at different IDs (maximum value) 2.55V @ 250µA
    Gate charge (Qg) at different Vgs (maximum value) 11nC @ 4.5V
    Input capacitance (Ciss) at different Vds (maximum value) 960pF @ 10V
    working temperature -55°C~150°C(TJ)
    Series HEXFET®
    Rds On(Max)@Id,Vgs 13.4mΩ@10A,10V
    Vgs (th) at different IDs (maximum value) 2.55V @ 250µA
    Gate charge (Qg) at different Vgs (maximum value) 11nC @ 4.5V
    Input capacitance (Ciss) at different Vds (maximum value) 960pF @ 10V
    Pd power dissipation (Max) 2W
    FET type N-Channel
    Drain source voltage Vds 20V
    Continuous drain current Id 10A
    Package/Enclosure 8-SO
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    In Stock :  0 Lead Time:14W

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