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Power MOSFET Micro8™

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    MPN IRF7503TRPBF
    Mfr. Infineon
    Oneyac # A-IRF7503TRPBF
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Double HexFet 30 V 1.25 W 12 nC Silicon Surface Mount Mosfet - MICRO-8

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Vgs (th) at different IDs (maximum value) 1V @ 250µA
    Gate charge (Qg) at different Vgs (maximum value) 12nC @ 10V
    Input capacitance (Ciss) at different Vds (maximum value) 210pF @ 25V
    working temperature -55°C~150°C(TJ)
    Series HEXFET®
    Rds On(Max)@Id,Vgs 135mΩ@1.7A,10V
    Vgs (th) at different IDs (maximum value) 1V @ 250µA
    Gate charge (Qg) at different Vgs (maximum value) 12nC @ 10V
    Input capacitance (Ciss) at different Vds (maximum value) 210pF @ 25V
    Pd power dissipation (Max) 1.25W
    FET type N-Channel
    Drain source voltage Vds 30V
    Continuous drain current Id 2.4A
    Package/Enclosure Micro8™
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