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Power Mosfet 8-SO

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    MPN IRF7495TRPBF
    Mfr. Infineon
    Oneyac # A-IRF7495TRPBF
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : 8-SO

    Specifications FAQ

    Description Details Operation
    Product Category Power Mosfet
    Gate voltage Vgs ±20V
    Gate Charge (Qg) at Different Vgs (Maximum) 51nC @ 10V
    Drive voltage @Rds On (Max), Rds On (Min) 10V
    Operating temperature -55°C~150°C(TJ)
    Series HEXFET®
    Drain-source voltage Vds 100V
    Input capacitance (Ciss) at different Vds (maximum) 1530pF @ 25V
    fet type N-Channel
    Input capacitance (Ciss) at different Vds (maximum) 1530pF @ 25V
    Gate Charge (Qg) at Different Vgs (Maximum) 51nC @ 10V
    Rds On(Max)@Id,Vgs 22mΩ@4.4A,10V
    Vgs (th) (maximum) at different Ids 4V @ 250µA
    Package/Enclosure 8-SO
    Pd-power dissipation (Max) 2.5W(Ta)
    Vgs (th) (maximum) at different Ids 4V @ 250µA
    Continuous Drain Current Id 7.3A
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    Qty. Unit Price Ext. Price
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    When unpacking without original label and tray!
    MPQ 4,000 ETD HK Contact Us
    Min. 1 Mult. 1

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