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Power MOSFET 8-SO

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    MPN IRF7425TRPBF
    Mfr. Infineon
    Oneyac # A-IRF7425TRPBF
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Single P-Channel 20 V 2.5 W 130 nC Silicon Surface Mount Mosfet - SOIC-8

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Vgs (th) at different IDs (maximum value) 1.2V @ 250µA
    Gate charge (Qg) at different Vgs (maximum value) 130nC @ 4.5V
    Gate voltage Vgs ±12V
    Input capacitance (Ciss) at different Vds (maximum value) 7980pF @ 15V
    Pd power dissipation (Max) 2.5W(Ta)
    working temperature -55°C~150°C(TJ)
    Series HEXFET®
    Drive voltage @ Rds On (Max), Rds On (Min) 2.5V,4.5V
    Vgs (th) at different IDs (maximum value) 1.2V @ 250µA
    Gate charge (Qg) at different Vgs (maximum value) 130nC @ 4.5V
    Input capacitance (Ciss) at different Vds (maximum value) 7980pF @ 15V
    Rds On(Max)@Id,Vgs 8.2mΩ@15A,4.5V
    FET type P-Channel
    Drain source voltage Vds 20V
    Continuous drain current Id 15A
    Package/Enclosure 8-SO
    Voltage, coupled to gate charge (Qg) (maximum) @ Vgs 4.5V
    Voltage, coupled to input capacitor (Ciss) (maximum) @ Vds 15V
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