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Power Mosfet 8-SO

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    MPN IRF7410TRPBF
    Mfr. Infineon
    Oneyac # A-IRF7410TRPBF
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Single P-Channel 12 V 13 mOhm 91 nC 2.5 W Silicon SMT Mosfet - SOIC-8

    Specifications FAQ

    Description Details Operation
    Product Category Power Mosfet
    Operating temperature -55°C~150°C(TJ)
    Gate Charge (Qg) at Different Vgs (Maximum) 91nC @ 4.5V
    Gate voltage Vgs ±8V
    Input capacitance (Ciss) at different Vds (maximum) 8676pF @ 10V
    Drive voltage @Rds On (Max), Rds On (Min) 1.8V,4.5V
    Vgs (th) (maximum) at different Ids 900mV @ 250µA
    Voltage, coupled to input capacitance (Ciss) (max) @ Vds 10V
    fet type P-Channel
    Drain-source voltage Vds 20V
    Pd-power dissipation (Max) 2.5W(Ta)
    Vgs (th) (maximum) at different Ids 900mV @ 250µA
    Gate Charge (Qg) at Different Vgs (Maximum) 91nC @ 4.5V
    Package/Enclosure 8-SO
    Input capacitance (Ciss) at different Vds (maximum) 8676pF @ 10V
    Series HEXFET®
    Continuous Drain Current Id 16A
    Rds On(Max)@Id,Vgs 7mΩ@16A,4.5V
    Voltage, coupled to gate charge (Qg) (max) @ Vgs 4.5V
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