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Power MOSFET D2PAK

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    MPN IRF3808STRLPBF
    Mfr. Infineon
    Oneyac # A-IRF3808STRLPBF
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    IRF3808S Series N-Channel 75 V 7 mO 200 W HEXFET MosFet Surface Mount - D2-PAK-3

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Vgs (th) at different IDs (maximum value) 4V @ 250µA
    Gate charge (Qg) at different Vgs (maximum value) 220nC @ 10V
    Gate voltage Vgs ±20V
    Input capacitance (Ciss) at different Vds (maximum value) 5310pF @ 25V
    Pd power dissipation (Max) 200W(Tc)
    working temperature -55°C~175°C(TJ)
    Series HEXFET®
    Drive voltage @ Rds On (Max), Rds On (Min) 10V
    Vgs (th) at different IDs (maximum value) 4V @ 250µA
    Gate charge (Qg) at different Vgs (maximum value) 220nC @ 10V
    Input capacitance (Ciss) at different Vds (maximum value) 5310pF @ 25V
    Rds On(Max)@Id,Vgs 7mΩ@82A,10V
    FET type N-Channel
    Drain source voltage Vds 75V
    Continuous drain current Id 106A
    Package/Enclosure D2PAK
    Voltage, coupled to gate charge (Qg) (maximum) @ Vgs 10V
    Voltage, coupled to input capacitor (Ciss) (maximum) @ Vds 25V
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