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Power MOSFET TO-220AB

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    MPN IRF3808PBF
    Mfr. Infineon
    Oneyac # A-IRF3808PBF
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Single N-Channel 75 V 330 W 220 nC Through Hole Mosfet - TO-220-3

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Vgs (th) at different IDs (maximum value) 4V @ 250µA
    Gate charge (Qg) at different Vgs (maximum value) 220nC @ 10V
    Input capacitance (Ciss) at different Vds (maximum value) 5310pF @ 25V
    working temperature -55°C~175°C(TJ)
    Series HEXFET®
    Drive voltage @ Rds On (Max), Rds On (Min) 10V
    Vgs (th) at different IDs (maximum value) 4V @ 250µA
    Gate charge (Qg) at different Vgs (maximum value) 220nC @ 10V
    Input capacitance (Ciss) at different Vds (maximum value) 5310pF @ 25V
    Package/Enclosure TO-220AB
    Number of channels 1Channel
    Drain source voltage Vds 75V
    Continuous drain current Id 140A
    Rds On(Max)@Id,Vgs 7mΩ
    Gate voltage Vgs 20V
    QG gate charge 150nC
    to configure Single
    Pd power dissipation (Max) 330W
    height 15.65mm
    length 10mm
    FET type N-Channel
    width 4.4mm
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