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Power MOSFET 

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    MPN AUIRFN8458TR
    Mfr. Infineon
    Oneyac # A-AUIRFN8458TR
    Supplier Oneyac
    Unleaded/RoHs YES
    Description

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Drain source voltage Vds 40V
    Vgs (th) at different IDs (maximum value) 3.9V @ 25µA
    Gate charge (Qg) at different Vgs (maximum value) 33nC @ 10V
    Input capacitance (Ciss) at different Vds (maximum value) 1060pF @ 25V
    working temperature -55°C~175°C(TJ)
    Number of channels 2Channel
    Continuous drain current Id 43A
    Rds On(Max)@Id,Vgs 10mΩ
    Gate voltage Vgs 20V
    QG gate charge 22nC
    to configure Dual
    Pd power dissipation (Max) 34W
    height 1.2mm
    length 6mm
    FET type 2N-Channel
    width 5mm
    Forward transconductance - minimum value 56S
    Descent time 19ns
    rise time 71ns
    Typical shutdown delay time 11ns
    Typical connection delay time 9.7ns
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    A : Oneyac self-run selected brand has the original factory authorized agent qualification, and can provide the agent certificate.Part of the product data comes from partners (such as holder, future electronics, RS electronics), and we have carried out strict qualification examination for the products, with original factory labels and relevant bills for inspection.

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