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Power MOSFET 

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    MPN AUIRFN8401TR
    Mfr. Infineon
    Oneyac # A-AUIRFN8401TR
    Supplier Oneyac
    Unleaded/RoHs YES
    Description

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Drive voltage @ Rds On (Max), Rds On (Min) 10V
    Vgs (th) at different IDs (maximum value) 3.9V @ 50µA
    Gate charge (Qg) at different Vgs (maximum value) 66nC @ 10V
    Input capacitance (Ciss) at different Vds (maximum value) 2170pF @ 25V
    working temperature -55°C~175°C(TJ)
    Continuous drain current Id 84A
    Rds On(Max)@Id,Vgs 4.6mΩ
    Minimum gate threshold voltage 2.2V
    Transistor configuration single
    pin number 8
    category Power MOSFET
    Pd power dissipation (Max) 63W
    Forward transconductance 144S
    Forward diode voltage 1.3V
    Number of components per chip 1 Ohms
    Transistor material Si
    Typical shutdown delay time 22 ns
    Typical connection delay time 6.1 ns
    width 5mm
    height 1.17mm
    Series HEXFET
    length 5.85mm
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