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Power MOSFET IPP029N06NAKSA1

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    MPN IPP029N06N
    Other # IPP029N06NAKSA1
    Mfr. Infineon
    Oneyac # A-IPP029N06N
    Supplier Oneyac
    Unleaded/RoHs YES
    Description

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Number of channels 1Channel
    Drain source voltage Vds 60V
    Continuous drain current Id 100A
    Rds On(Max)@Id,Vgs 2.7mΩ
    Gate voltage Vgs 20V
    QG gate charge 66nC
    to configure Single
    Pd power dissipation (Max) 136W
    height 15.65mm
    length 10mm
    Series OptiMOS5
    FET type N-Channel
    width 4.4mm
    Forward transconductance - minimum value 80S
    Descent time 8ns
    rise time 15ns
    Typical shutdown delay time 30ns
    Typical connection delay time 17ns
    working temperature -55°C~175°C
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