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Power MOSFET IPP023N10N5AKSA1 TO-220-3

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    MPN IPP023N10N5
    Other # IPP023N10N5AKSA1
    Mfr. Infineon
    Oneyac # A-IPP023N10N5
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : TO-220-3

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Number of channels 1Channel
    Drain source voltage Vds 100V
    Continuous drain current Id 120A
    Rds On(Max)@Id,Vgs 2.3mΩ@100A,10V
    Gate voltage Vgs ±20V
    QG gate charge 210nC
    to configure Single
    Pd power dissipation (Max) 375W
    height 15.65mm
    length 10mm
    Series OptiMOS5
    FET type N-Channel
    width 4.4mm
    Forward transconductance - minimum value 124S
    Descent time 29ns
    rise time 26ns
    Typical shutdown delay time 77ns
    Typical connection delay time 33ns
    working temperature -55°C~175°C
    Package/Enclosure TO-220-3
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