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Power MOSFET IPP023NE7N3GXKSA1

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    MPN IPP023NE7N3 G
    Other # IPP023NE7N3GXKSA1
    Mfr. Infineon
    Oneyac # A-IPP023NE7N3 G
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Series : OptiMOS3

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Number of channels 1Channel
    Drain source voltage Vds 75V
    Continuous drain current Id 120A
    Rds On(Max)@Id,Vgs 2.1mΩ
    Gate voltage Vgs 20V
    QG gate charge 206nC
    to configure Single
    Pd power dissipation (Max) 300W
    height 15.65mm
    length 10mm
    Series OptiMOS3
    FET type N-Channel
    width 4.4mm
    Forward transconductance - minimum value 98S
    Descent time 22ns
    rise time 26ns
    Typical shutdown delay time 70ns
    Typical connection delay time 19ns
    working temperature -55°C~175°C
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