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Power MOSFET IPD200N15N3GATMA1 DPAK (TO-252)

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    MPN IPD200N15N3 G
    Other # IPD200N15N3GATMA1
    Mfr. Infineon
    Oneyac # A-IPD200N15N3 G
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : DPAK (TO-252)

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Number of channels 1Channel
    QG gate charge 31nC
    to configure Single
    Pd power dissipation (Max) 150W
    height 2.3mm
    length 6.5mm
    width 6.22mm
    Forward transconductance - minimum value 29S
    Descent time 6ns
    rise time 11ns
    Typical shutdown delay time 23ns
    Typical connection delay time 14ns
    Moisture Level 1 Ohms
    Rds On(Max)@Id,Vgs 20mΩ
    Drain source voltage Vds 150V
    Continuous drain current Id 50A
    QG (typ @10V) 23.0 nC
    Package/Enclosure DPAK (TO-252)
    Rth 1.0K/W
    Budgetary Price €/1k 0.85
    Ptot max 150.0W
    FET type N-Channel
    Coss 214.0 pF
    Ciss 1820.0pF
    Gate voltage Vgs 3V,2V,4V
    working temperature -55°C~175°C
    Series OptiMOS™
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