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Power MOSFET IPD122N10N3GATMA1 DPAK (TO-252)

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    MPN IPD122N10N3 G
    Other # IPD122N10N3GATMA1
    Mfr. Infineon
    Oneyac # A-IPD122N10N3 G
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : DPAK (TO-252)

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Number of channels 1Channel
    QG gate charge 35nC
    to configure Single
    Pd power dissipation (Max) 94W
    height 2.3mm
    length 6.5mm
    width 6.22mm
    Forward transconductance - minimum value 29S
    Descent time 5ns
    rise time 8ns
    Typical shutdown delay time 24ns
    Typical connection delay time 14ns
    Moisture Level 1 Ohms
    Rds On(Max)@Id,Vgs 12.2mΩ
    Drain source voltage Vds 100V
    Continuous drain current Id 59A
    QG (typ @10V) 26.0 nC
    Package/Enclosure DPAK (TO-252)
    Rth 1.6K/W
    Budgetary Price €/1k 0.48
    Ptot max 94.0W
    FET type N-Channel
    Coss 330.0 pF
    Ciss 1880.0 pF
    Gate voltage Vgs 2.7V,2V,3.5V
    working temperature -55°C~175°C
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